M58LR128FT Datasheet, PDF (18/82 Pages) STMicroelectronics – 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory

M58LR128FT, M58LR128FB
Table 5. Standard Commands
Bus Operations
Commands
1st Cycle
2nd Cycle
Op.
Add
Data
Op.
Add
Data
Read Array
1+
Write
BKA
FFh
Read
WA
RD
Read Status Register
1+
Write
BKA
70h
Read
BKA⁽²⁾
SRD
Read Electronic Signature
1+
Write
BKA
90h
Read
BKA⁽²⁾
ESD
Read CFI Query
1+
Write
BKA
98h
Read
BKA⁽²⁾
QD
Clear Status Register
1
Write
BKA
50h
Block Erase
BKA or
2
Write
BA⁽³⁾
20h
Write
BA
D0h
Program
BKA or
2
Write
WA⁽³⁾
40h or 10h
Write
WA
PD
Write
BA
E8h
Write
BA
n
Buffer Program
n+4
Write
PA₁
PD₁
Write
PA₂
PD₂
Write
PA_n+1
PD_n+1
Write
X
D0h
Program/Erase Suspend
1
Write
X
B0h
Program/Erase Resume
1
Write
X
D0h
Protection Register Program
2
Write
PRA
C0h
Write
PRA
PRD
Set Configuration Register
2
Write
CRD
60h
Write
CRD
03h
Block Lock
BKA or
2
Write
BA⁽³⁾
60h
Write
BA
01h
Block Unlock
BKA or
2
Write
BA⁽³⁾
60h
Write
BA
D0h
Block Lock-Down
BKA or
2
Write
BA⁽³⁾
60h
Write
BA
2Fh
Note: 1. X = Don't Care, WA=Word Address in targeted bank, RD=Read Data, SRD=Status Register Data, ESD=Electronic Signature Data,
QD=Query Data, BA=Block Address, BKA= Bank Address, PD=Program Data, PRA=Protection Register Address, PRD=Protection
Register Data, CRD=Configuration Register Data.
2. Must be same bank as in the first cycle. The signature addresses are listed in Table 7.
3. Any address within the bank can be used.
4. n+1 is the number of Words to be programmed.
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