STGP6M65DF2 Datasheet, PDF (16/17 Pages) STMicroelectronics – Trench gate field-stop IGBT, M series 650 V, 6 A low loss

Revision history
STGP6M65DF2
5
Revision history
Date
30-Nov-2015
13-Jan-2016
03-Aug-2016
Revision
1
2
3
Table 9: Document revision history
Changes
First release.
Modified: Table 4: "Static characteristics", Table 5: "Dynamic
characteristics", Table 6: "IGBT switching characteristics (inductive
load)", and Table 7: "Diode switching characteristics (inductive load)"
Added: Section 2.1: "Electrical characteristics (curves)"
Minor text changes.
Updated Table 2: "Absolute maximum ratings", Table 4: "Static
characteristics", Table 6: "IGBT switching characteristics (inductive
load)", Table 7: "Diode switching characteristics (inductive load)".
Updated Figure 9: "Forward bias safe operating area", Figure 12:
"Normalized VGE(th) vs. junction temperature", Figure 20: "Short-
circuit time and current vs. VGE", Figure 23: "Reverse recovery
current vs. diode current slope".
Changed Figure 25: "Reverse recovery charge vs. diode current
slope" and Figure 26: "Reverse recovery energy vs. diode current
slope".
16/17
DocID028696 Rev 3