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STM32F756XX Datasheet, PDF (135/228 Pages) STMicroelectronics – ARM-based Cortex-M7 32b MCU+FPU, 462DMIPS, up to 1MB Flash/320+16+ 4KB RAM, crypto, USB OTG HS/FS, ethernet, 18 TIMs, 3 ADCs, 25 com itf, cam & LCD
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STM32F756xx
Electrical characteristics
Symbol
Table 48. Flash memory programming (continued)
Parameter
Conditions
Min(1) Typ Max(1) Unit
Program/erase parallelism
(PSIZE) = x 8
-
2.1
4
tERASE256KB
Sector (256 KB) erase time
Program/erase parallelism
(PSIZE) = x 16
-
1.5 2.6
s
Program/erase parallelism
(PSIZE) = x 32
-
1
2
Program/erase parallelism
(PSIZE) = x 8
-
8
16
tME
Mass erase time
Program/erase parallelism
(PSIZE) = x 16
-
5.6 11.2 s
Program/erase parallelism
(PSIZE) = x 32
-
4
8
32-bit program operation 2.7
-
3
V
Vprog
Programming voltage
16-bit program operation 2.1
-
3.6 V
8-bit program operation
1.7
-
3.6 V
1. Guaranteed by characterization results.
2. The maximum programming time is measured after 100K erase operations.
Symbol
Table 49. Flash memory programming with VPP
Parameter
Conditions
Min(1) Typ
tprog
Double word programming
-
16
tERASE32KB Sector (32 KB) erase time
tERASE128KB Sector (128 KB) erase time
tERASE256KB Sector (256 KB) erase time
TA = 0 to +40 °C
VDD = 3.3 V
VPP = 8.5 V
-
180
-
450
-
900
tME
Mass erase time
-
6.9
Vprog
Programming voltage
-
2.7
-
VPP
VPP voltage range
-
7
-
IPP
Minimum current sunk on
the VPP pin
-
10
-
tVPP(3)
Cumulative time during
which VPP is applied
-
-
-
1. Guaranteed by design.
2. The maximum programming time is measured after 100K erase operations.
3. VPP should only be connected during programming/erasing.
Max(1) Unit
100(2) µs
-
-
ms
-
-
s
3.6
V
9
V
-
mA
1 hour
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