 English |
|
|
|
|
|
|
|
| M28C64 Datasheet, PDF (13/24 Pages) STMicroelectronics – 64 Kbit 8K x 8 Parallel EEPROM With Software Data Protection | |||
| |||
| ◁ |
Table 10B. Write Mode AC Characteristics for M28C64 (5V range)
(TA = â40 to 125 °C; VCC = 4.5 to 5.5 V)
Symbol Alt.
Parameter
Test Condit ion
tAVWL tAS Address Valid to Write Enable Low
tAVEL tAS Address Valid to Chip Enable Low
tELWL tCES Chip Enable Low to Write Enable Low
tGHWL tOES Output Enable High to Write Enable Low
tGHEL tOES Output Enable High to Chip Enable Low
tWLEL tWES Write Enable Low to Chip Enable Low
tWLAX tAH Write Enable Low to Address Transition
tELAX tAH Chip Enable Low to Address Transition
tWLDV tDV Write Enable Low to Input Valid
tELDV tDV Chip Enable Low to Input Valid
tELEH tWP Chip Enable Low to Chip Enable High
tWHEH tCEH Write Enable High to Chip Enable High
tWHGL tOEH Write Enable High to Output Enable Low
tEHGL tOEH Chip Enable High to Output Enable Low
tEHWH tWEH Chip Enable High to Write Enable High
tWHDX tDH Write Enable High to Input Transition
tEHDX tDH Chip Enable High to Input Transition
tWHWL tWPH Write Enable High to Write Enable Low
tWLWH tWP Write Enable Low to Write Enable High
tWLQ5H
Time-out after last byte write (M28C64)
tBLC
Time-out after last byte write (M28C64-A)
Write Cycle Time (M28C64)
tQ5HQ5X tWC
Write Cycle Time (M28C64-A)
tWHRL tDB Write Enable High to Ready/Busy Low
tEHRL tDB Chip Enable High to Ready/Busy Low
tDVWH tDS Data Valid before Write Enable High
tDVEH tDS Data Valid before Chip Enable High
E = VIL, G = VIH
G = VIH, W = VIL
G = VIH
E = VIL
W = VIL
G = VIH
E = VIL, G = VIH
G = VIH, W = VIL
Note 1
Note 1
M28C64
M28C64
Min
Max
0
0
0
0
0
0
75
75
1
1
50
0
0
0
0
0
0
50
1000
50
100
20
3
1
150
150
50
50
Unit
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ms
ms
ns
ns
ns
ns
13/24
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese