STM32F217VGT6 Datasheet, PDF (117/175 Pages) STMicroelectronics – ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/128+4KB RAM

STM32F21xxx
Electrical characteristics
Figure 44. USB OTG FS timings: definition of data signal rise and fall time
Differen tial
Data L ines
VCR _S
Crossover
points
VS _S
tf
tr
ai14137
Table 57. USB OTG FS electrical characteristics⁽¹⁾
Driver characteristics
Symbol
Parameter
Conditions
Min
Max
Unit
t_r
Rise time⁽²⁾
t_f
Fall time⁽²⁾
C_L = 50 pF
4
C_L = 50 pF
4
20
ns
20
ns
t_rfm
Rise/ fall time matching
t_r/t_f
90
110
%
V_CRS Output signal crossover voltage
1.3
2.0
V
1. Guaranteed by design, not tested in production.
2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB
Specification - Chapter 7 (version 2.0).
USB HS characteristics
Table 58 shows the USB HS operating voltage.
Symbol
Table 58. USB HS DC electrical characteristics
Parameter
Min.⁽¹⁾
Input level
V_DD USB OTG HS operating voltage
2.7
1. All the voltages are measured from the local ground potential.
Max.⁽¹⁾
3.6
Unit
V
Table 59. Clock timing parameters
Parameter⁽¹⁾
Symbol
Min Nominal Max Unit
Frequency (first transition)
8-bit ±10% F_{START_8BIT}
Frequency (steady state) ±500 ppm
F_STEADY
Duty cycle (first transition)
8-bit ±10% D_{START_8BIT}
Duty cycle (steady state) ±500 ppm
D_STEADY
Time to reach the steady state frequency and
duty cycle after the first transition
T_STEADY
Clock startup time after the
de-assertion of SuspendM
Peripheral
Host
PHY preparation time after the first transition
of the input clock
T_{START_DEV}
T_{START_HOST}
T_PREP
54
59.97
40
49.975
-
-
-
-
60
66 MHz
60
60.03 MHz
50
60
%
50 50.025 %
-
1.4
ms
-
5.6
ms
-
-
-
-
µs
1. Guaranteed by design, not tested in production.
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