VND5E004C30 Datasheet, PDF (11/35 Pages) STMicroelectronics – Double 4m high-side driver with analog CurrentSense

VND5E004C30
Electrical specifications
Symbol
Table 9. Current sense (8 V < V_CC < 18 V) (continued)
Parameter
Test conditions
Min. Typ. Max. Unit
I_OUT = 0 A; V_SENSE = 0 V; V_DE = 0 V;
V_IN = 0 V; T_j = -40 °C to 150 °C
0
I_SENSE0
Analog sense
leakage current
I_OUT = 0 A; V_SENSE = 0 V; V_DE = 5 V;
V_IN = 5 V; T_j = -40 °C to 150 °C
0
I_OUT = 15 A; V_SENSE = 0 V;
V_DE = 0 V; V_IN = 5 V;
0
I_OL
Open-load on-
state current
detection threshold
V_IN = 5 V; 8 V < V_CC < 18 V
I_SENSE = 5 µA
10
V_SENSE
Max analog sense I_OUT = 45 A; V_CSD = 0 V;
output voltage
R_SENSE = 3.9 kΩ
Analog sense
V_SENSEH output voltage in
fault condition⁽²⁾
V_CC =13 V; R_SENSE = 3.9 kΩ
5
8
Analog sense
I_SENSEH output current in V_CC =13 V; V_SENSE = 5 V
9
fault condition⁽²⁾
Delay response ^V_SENSE ^{< 4 V; 5 A < I}_OUT ^{< 30 A;}
t_DSENSE1H time from rising
I_SENSE = 90 % of I_{SENSE max}
50
edge of DE pin (see Figure 4)
Delay response V_SENSE < 4 V; 5 A < I_OUT < 30 A;
t_DSENSE1L time from falling I_SENSE = 10 % of I_{SENSE max}
5
edge of DE pin (see Figure 4)
Delay response V_SENSE < 4 V; 5 A < I_OUT < 30 A;
t_DSENSE2H time from rising
I_SENSE = 90 % of I_{SENSE max}
200
edge of INPUT pin _{VDE = 5 V (see Figure 4)}
Delay response ^V_SENSE ^{< 4 V; 5 A < I}_out ^{< 30 A;}
t_DSENSE2L time from falling I_SENSE = 10 % of I_{SENSE max}
100
edge of INPUT pin V_DE = 5 V (see Figure 4)
1. Parameter guaranteed by design; it is not tested.
2. Fault condition includes: power limitation, overtemperature and open-load off-state detection.
1 µA
2 µA
1 µA
150 mA
V
V
mA
100 µs
20 µs
600 µs
250 µs
Symbol
Table 10. Open-load detection (8 V < V_CC < 18 V; V_DE = 5 V)
Parameter
Test conditions
Min. Typ. Max. Unit
V_OL
Open-load off-state voltage
detection threshold
t_DSTKON
Output short circuit to V_CC
detection delay at turn off
I_L(off2)r
Off-state output current at
V_OUT = 4 V
V_IN = 0 V, V_DE = 5 V;
See Figure 5
V_DE = 5 V; See Figure 5
V_IN = 0 V; V_SENSE = 0 V;
V_DE = 5 V;
V_OUT rising from 0 V to 4 V
2 — 4V
180 — 1200 µs
-120 — 90 µA
DocID027937 Rev 2
11/35
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