STV7801S Datasheet, PDF (11/18 Pages) STMicroelectronics – PLASMA DATA POWER SWITCH

13 - APPLICATION DIAGRAM
10K
HL-Tr ₁
100pF
10K
H-Clmp
2
100pF
10K
L-Clmp
3
100pF
10K
LH-Tr
4
100pF
47µF/160V
5
1µF/160V
DM-HL
6
PR
7
STV7801S
Vpp
15
Vpp
14
CBoot
13
Out
12
Vssp
11
+90V
100µF/160V
1nF
to Vpp pins
of data driver ICs
(eg pins 1, 2, 42, 66,
1µH
107,108 of STV7610A)
Vdd
10
DM-LH
9
Vsslog
8
The diodes for the recirculation current directly im-
pact the device performances. High Voltage di-
odes with recovery time inferior to 50ns are recom-
mended. Shorter recovery times will improve the
power efficiency of the application.
The rise and fall time of the output signal is adjust-
ed by the value of the inductance for a given ca-
pacitive load.
trise (tfall) is calculated by the following formula :
trise= πx LxCload
A 1nF bootstrap capacitor is recommended.
The bootstrap capacitor allows the output signal to
reach the Vpp value. For a given output level, the
power efficiency will be increased.
A 47µF capacitor is recommended. The ripple on
the tank capacitor is reduced by increasing the
tank capacitor value.
Decoupling capacitors on the power supplies will
minimise the overshoots.
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