PM8908 Datasheet, PDF (11/28 Pages) STMicroelectronics – Monolithic buck converter for DDR memory termination

PM8908
Electrical specifications
Symbol
Table 5. Electrical characteristics (continued)
Parameter
Test conditions
Min. Typ. Max. Unit
Soft-end
R_DS
Phase discharge resistance
Overcurrent protection
47

I_OCL Positive overcurrent threshold LS sourcing, R_M = 47 k
I_OCLN Negative overcurrent threshold LS sourcing, R_M = 47 k
Bootstrap switch
R_BSS Boot switch on-resistance
I_BOOT = 10 mA, T_A = 25 °C
Over and undervoltage protection
4 7.6 11 A
-11 - 7.6 - 4 A
12 
OVP OVP threshold
t_OVPd OVP delay
UVP UVP threshold
t_UVPd UVP delay
Undervoltage fault enable
delay
V_OUT rising
Time from the V_OUT pinout of + 20% of
REFIN to OVP fault
117
120
123
%
V_REFIN
10
s
V_OUT falling
Time from the V_OUT pinout of -30% of
REFIN to UVP fault
65
68
71
%
V_REFIN
256
s
Time from EN = H to undervoltage ready
2.4
ms
External tracking
9
ms
Time from EN = H to undervoltage ready
Overtemperature protection
OTP
Thermal shutdown threshold⁽¹⁾
Thermal shutdown
hysteresis⁽¹⁾
145
°C
10
°C
PGOOD
PGOOD
Upper threshold
Lower threshold
V_PGOOD,L
PGOOD voltage low
impedance
I_PGOOD,H
PGOOD leakage high
impedance
t_PGd
t_PGHd
t_PGLd
PGOOD startup delay time
PGOOD high delay time
PGOOD low delay time
V_OUT rising
Hysteresis
V_OUT falling
Hysteresis
I_{PGOOD_SINK} = 4 mA, VCC = 4.5 V
V_PGOOD = 5.5 V
External tracking
Time from EN = H to PGOOD high
Rising edge
Falling edge⁽²⁾
116
8
%
84
V_REFIN
8
0.3 V
1 A
10
ms
0.8 1 1.2 ms
10
s
DocID027688 Rev 3
11/28
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