PM6641 Datasheet, PDF (11/47 Pages) STMicroelectronics – Monolithic VR for chipset and DDR2/3 supply for ultra-mobile PC (UMPC) applications

PM6641
Electrical characteristics
Table 6. Electrical characteristics (continued)
Symbol
Parameter
Test condition
Values
Unit
Min Typ Max
Soft end section – chipset 1.05 V rail
Discharge resistance
LS Turn-on VFB_1SX
VFB_S1X to OUT_X
Threshold with internal divider
LS Turn-on VFB_1SX
VFB_S1X to external divider
Threshold with external divider
25
Ω
0.2
V
0.16
Power management section – chipset 1.05 V rail
EN_1S05 Turn-Off level
EN_1S05 Turn-On level
V_AVCC = +5 V
0.8
V
2
Switching node – DDR2/3 rails
t_Onmin
RDSon,HS
RDSon,LS
Minimum On-Time
High side PMOS Ron
Low side NMOS Ron
I_INLEAK VIN_1S8 leakage current
Peak current limit
V_AVCC = V_VCC = 5 V,
all EN_1S8 low
R_CSNS = 50 kΩ
V_IN =
+5 V
V_IN =
+3.3 V
200
ns
90
130
mΩ
80
120
1
µA
1
6.1
A
Soft end section – DDR2/3 rails
VDDQ discharge resistance in
non-tracking discharge mode
VTTREF discharge resistance
in non-tracking discharge mode
VTTFB discharge resistance in
non-tracking discharge mode
V_{FB_1SX} Threshold for final
tracking/Non-tracking discharge VFB_S1X to OUT_X
transition with internal divider
V_{FB_1SX} Threshold for final
tracking/Non-tracking discharge VFB_S1X to external divider
transition with external divider
25
Ω
200
Ω
40
Ω
0.340
V
0.160
V
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