HVLED001 Datasheet, PDF (11/27 Pages) STMicroelectronics – 800 V high voltage start-up

HVLED001
Electrical characteristics
Table 5. Electrical characteristics (continued)
Symbol Pin
Parameter
Test condition
Min.
VZCD,cl_l
IZCDb
IBO
TBO
ZCD
ZCD negative clamping
voltage
ZCD ZCD pin biasing current
ZCD Brownout detection level
ZCD Brownout detection time
IZCD src = 1 mA
VZCD = 0.1 to 2.6 V⁽³⁾
Sourcing during on time⁽³⁾
IZCD < IBO⁽⁴⁾
Td,ZCD
ZCD ZCD propagation delay
Measured from last VZCD,trig
crossing and GD rising edge⁽³⁾
Timing
Recovery time after opto
Trec
failure, analogue disable ⁽⁴⁾
or brownout
Gate driver
VGDH
GD Output high voltage
IGD,source = 5 mA
VGDL
GD Output low voltage
IGD,sink = 5 mA
Isource
Isink
GD
Output source peak
current
VGD = 7.5 V⁽³⁾
GD Output sink peak current VGD = 7.5 V⁽³⁾
Tf
GD Fall time
CGD = 1 nF, from 13.5 V to 1.5 V
Tr
GD Rise time
CGD = 1 nF, from 1.5 V to 13.5 V
VGD,shd
GD
Maximum voltage during
shutdown
Vcc < V_CC,shd, IGD = 2 mA
CTRL input
VCTRL,dis CTRL Disabling threshold
Negative-going edge⁽¹⁰⁾
Vadis CTRL Timed disabling threshold ⁽¹⁰⁾
-230
90
2.2
14.5
0.3
0.6
0.4
2.4
TADIS
Max. operating interval
CTRL after analog disable
feature triggering
Vctrl,bias CTRL CTRL biasing voltage
Ictrl,bias CTRL CTRL biasing current
Rctrl CTRL Internal parallel resistor
Vctrl,pd
Pin voltage during low
CTRL consumption (power
good)
Veoss CTRL End of soft-start level
TOFF characteristics
VTOFF TOFF Operating range
VTOFF,fix
TOFF
Minimum fixed TBLANK
voltage
VCTRL > Vadis⁽⁴⁾
Tamb = 25 °C⁽¹⁰⁾
Over whole temp. range⁽³⁾
VCTRL = 0 V
(11)
90
1.85
1.75
5
Low consumption, ICTRL = 0.2 mA
(10)
1.7
(1)
GND
(3)
Typ.
-135
100
100
300
2.5
15
30
1
0.5
2.6
100
2.05
10
205
1.8
2
Max. Unit
mV
1 µA
µA
110 ms
ns
2.8 s
V
0.1 V
A
A
ns
ns
2V
0.6 V
2.85 V
110 ms
2.25
V
2.35
15 µA
k
0.2 V
1.9 V
3.3 V
V
DocID027333 Rev 1
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