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| ST3S01PHD Datasheet, PDF (10/17 Pages) STMicroelectronics – BATTERY CHARGE I.C. | |||
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ST3S01PHD
I.C. CONSUMPTION (TA =-40 to 85°C, VCHARGE<VBATT, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min. Typ.
IBATT
Current Consumption
from Battery Pin
VCMD-PWM=1.9V
VCMD-MODE=0V or 1.9V
VBATT= 3 to 5.25V
VCHARGE= floating
VCMD-REVERSE=0V
VBATT= 5.25V
140
VCHARGE= floating
VCMD-REVERSE=1.9V
ICHARGE Current Consumption
VCHARGE= 5.25V VBATT= floating
78
from the Charge Pin
VCMD-REVERSE=0V VCMD-PWM=1.9V
VCMD-MODE=0V or 1.9V
Max.
15
300
250
Unit
µA
µA
µA
µA
ESD PROTECTION
Symbol
ESD
Parameter
Electrostatic Discharge
Immunity for VCHARGE
and VBATT pins
Test Conditions
TA=25°C
Human Body Method MIL STD
833D-3015.7
Min. Typ. Max. Unit
±4
kV
TYPICAL PERFORMANCE CHARACTERISTICS (unless otherwise specified Tj = 25°C)
Figure 1 : Precharge Current Limit vs
Temperature
Figure 2 : Charge Drop Voltage vs Temperature
10/17
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