PM6670S Datasheet, PDF (10/53 Pages) STMicroelectronics – Complete DDR2/3 memory power supply controller

Electrical characteristics
PM6670S
Table 6.
Symbol
Electrical characteristics (continued)
T_A = 0 °C to 85 °C , VCC = AVCC = +5 V and LDOIN connected to VDDQ output if not
otherwise specified. ⁽¹⁾
Parameter
Test condition
Values
Unit
Min Typ Max
VDDQ output
VDDQ output voltage, DDR3
MODE connected to AVCC,
DDRSEL tied to SGND, No load
1.5
V
V_{VDDQ VDDQ output voltage, DDR2 MODE and DDRSEL connected to}
1.8
Feedback accuracy
AVCC, No load
-1.5
1.5
%
Current limit and zero crossing comparator
I_CSNS CSNS input bias current
Comparator offset
Rsense = 1 kΩ
Positive current limit threshold
V_PGND - V_CSNS
Fixed negative current limit
threshold
V_ZC,OFFS
Zero crossing comparator
offset
90 100 110 µA
-6
6
mV
100
mV
110
mV
-11
-5
1
mV
High and low side gate drivers
HGATE high state (pull-up)
HGATE driver on-resistance
HGATE low state (pull-down)
LGATE driver on-resistance
LGATE high state (pull-up)
LGATE low state (pull-down)
UVP/OVP protections and PGOOD SIGNAL (SMPS only)
2.0
3
1.8
2.7
Ω
1.4
2.1
0.6
0.9
OVP Over voltage threshold
UVP Under voltage threshold
Power-good upper threshold
PGOOD
Power-good lower threshold
I_PG,LEAK PG leakage current
V_PG,LOW PG low-level voltage
Soft start section (SMPS)
PG forced to 5 V
I_PG,SINK = 4 mA
112 115 118
67
70
73
%
107 110 113
86
90
93
1
µA
150 250 mV
Soft-start ramp time
(4 steps current limit)
Soft-start current limit step
2
3
4
ms
25
µA
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