LIS3LV02DQ Datasheet, PDF (10/42 Pages) STMicroelectronics – MEMS INERTIAL SENSOR 3-Axis - +-2g/+-6g Digital Output Low Voltage Linear Accelerometer

2 Mechanical and Electrical specifications
LIS3LV02DQ
Table 3. Mechanical Characteristics (continued)
(All the parameters are specified @ Vdd=3.3V, T=25°C unless otherwise noted)
Symbol
Parameter
Test conditions
Min.
Typ.²
Max.
Full-scale=2g
X axis
Full-scale=2g
Y axis
Full-scale=2g
Z axis
V_st
Self test Output Change^7,8
Full-scale=6g
X axis
Full-scale=6g
Y axis
Full-scale=6g
Z axis
BW _{System Bandwidth}⁹
Top
Operating Temperature
Range
Wh Product Weight
250
550
900
250
550
900
100
350
600
80
180
300
80
180
300
30
120
200
ODRx/4
-40
+85
0.2
Unit
LSb
LSb
LSb
LSb
LSb
LSb
Hz
°C
gram
Note: 1 The product is factory calibrated at 2.5V. The device can be used from 2.16V to 3.6V
2 Typical specifications are not guaranteed
3 Verified by wafer level test and measurement of initial offset and sensitivity
4 Zero-g level offset value after MSL3 preconditioning
5 Offset can be eliminated by enabling the built-in high pass filter (HPF)
6 Results of accelerated reliability tests
7 Self Test output changes with the power supply. Self test “output change” is defined as
OUTPUT[LSb]_{(Self-test bit on ctrl_reg1=1)}-OUTPUT[LSb]_{(Self-test bit on ctrl_reg1=0)}. 1LSb=1g/1024 at
12bit representation, 2g Full-Scale
8 Output data reach 99% of final value after 5/ODR when enabling Self-Test mode due to device
filtering
9 ODR is output data rate. Refer to table 4 for specifications
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