WS57LV291C Datasheet, PDF (1/6 Pages) STMicroelectronics – HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM

WS57LV291C
PRELIMINARY
HIGH SPEED 3.3 VOLT 2K x 8 CMOS PROM/RPROM
• 3.3 Volt ± 0.3 Volt V_CC
• Fast Access Time
— t_ACC = 70 ns
— t_CS = 20 ns
• Low Power Consumption
— ≤ 25 mA I_CC
KEY FEATURES
• Available in 300 Mil "Skinny" DIP
• Immune to Latch-up
— Up to 200 mA
• ESD Protection Exceeds 2000V
GENERAL DESCRIPTION
The WS57LV291C is a High Performance 2K x 8 UV Erasable Re-Programmable Read Only Memory (RPROM).
This RPROM is manufactured using an advanced CMOS EPROM manufacturing process resulting in a very low
power die that affords exceptional speed capabilities with a 3.3 volt V_CC supply. The WS57LV291C
is configured in the standard Bipolar PROM pinouts, the preferred and most common pinout for high speed PROMs
of 16K density.
Operating at 3.3 volts, the WS57LV291C dissipates a maximum of 25 mA under worst case conditions at maximum
speed (70 ns T_AA). Typical I_CC at 25°C is less than 20 milliamps.
The WS57LV291C is packaged in a space saving 300 mil windowed, hermetic DIP package.
BLOCK DIAGRAM
6
A5 - A10
ROW
ADDRESSES
ROW
DECODER
EPROM ARRAY
16,384 BITS
5
A0 - A4
COLUMN
ADDRESSES
CS1/ VPP
CS2
CS3
COLUMN
DECODER
SENSE
AMPLIFIERS
8
OUTPUTS
PRODUCT SELECTION GUIDE
PARAMETER
Address Access Time (Max)
CS to Output Valid Time (Max)
Return to Main Menu
PIN CONFIGURATION
TOP VIEW
CERDIP
A₇ 1
A₆ 2
A₅ 3
A₄ 4
A₃ 5
A₂ 6
A₁ 7
A₀ 8
O₀ 9
O₁ 10
O₂ 11
GND 12
24 V_CC
23 A₈
22 A₉
21 A10
20 CS1/V_PP
19 CS2
18 CS3
17 O₇
16 O₆
15 O₅
14 O₄
13 O₃
WS57LV291C-70
70 ns
20 ns
WS57LV291C-90
90 ns
30 ns
2-15