WS57C191C Datasheet, PDF (1/7 Pages) STMicroelectronics – HIGH SPEED 2K x 8 CMOS PROM/RPROM

WS57C191C/291C
HIGH SPEED 2K x 8 CMOS PROM/RPROM
KEY FEATURES
• Ultra-Fast Access Time
— t_ACC = 25 ns
— t_CS = 12 ns
• Low Power Consumption
• Fast Programming
• Available in 300 Mil DIP and PLDCC
• Pin Compatible with Am27S191/291
and N82S191 Bipolar PROMs
• Immune to Latch-UP
— Up to 200 mA
• ESD Protection Exceeds 2000V
GENERAL DESCRIPTION
The WS57C191C/291C is an extremely High Performance 16K UV Erasable Electrically Re-Programmable Read
Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar
PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. The WS57C191C/291C
is also configured in the standard Bipolar PROM pinout which provides an easy upgrade path for systems which are
currently using Bipolar PROMs.
The WS57C191C is packaged in a conventional 600 mil DIP package as well as a Plastic Leaded Chip Carrier
(PLDCC) and a Ceramic Leadless Chip Carrier (CLLCC). The WS57C291C is packaged in a space saving 300 mil
DIP package configuration. Both are available in commercial, industrial, and military operating temperature ranges.
BLOCK DIAGRAM
6
A5 - A10
ROW
ADDRESSES
ROW
DECODER
EPROM ARRAY
16,384 BITS
5
A0 - A4
COLUMN
ADDRESSES
CS1/ VPP
CS2
CS3
COLUMN
DECODER
SENSE
AMPLIFIERS
8
OUTPUTS
PIN CONFIGURATION
TOP VIEW
Chip Carrier
CERDIP/Plastic DIP
NC
A₅ A₆ A₇ V_CC A₈ A₉
A₇ 1
A₄
4
5
3
2
1
28 27 26
25
A₁₀
A₆ 2
A₅ 3
A₃ 6
A₂ 7
24
23
CS1/V_PP
CS2
A₄
A₃
4
5
A₁ 8
22 CS3
A₀ 9
21 NC
NC 10
20 O₇
O₀ 11
19 O₆
12 13 14 15 16 17 18
A₂ 6
A₁ 7
A₀ 8
O₀ 9
O₁ 10
O₂ 11
O₁ O₂ NC O₃ O₄ O₅
GND
GND 12
24 V_CC
23 A₈
22 A₉
21 A10
20 CS1/V_PP
19 CS2
18 CS3
17 O₇
16 O₆
15 O₅
14 O₄
13 O₃
PRODUCT SELECTION GUIDE
PARAMETER
Address Access Time (Max)
CS to Output Valid Time (Max)
191C/291C-25
25 ns
12 ns
191C/291C-35
35 ns
20 ns
191C/291C-45
45 ns
20 ns
191C/291C-55
55 ns
20 ns
Return to Main Menu
2-7