WS57C191C-1 Datasheet, PDF (1/2 Pages) STMicroelectronics – MILITARY HIGH SPEED 2K x 8 CMOS PROM/RPROM

WS57C191C/291C
MILITARY HIGH SPEED 2K x 8 CMOS PROM/RPROM
• Ultra-Fast Access Time
— t_ACC = 35 ns
— t_CS = 20 ns
• Low Power Consumption
• Fast Programming
• Available in 300 and 600 Mil DIP
KEY FEATURES
• Pin Compatible with Am27S191/291
and N82S191 Bipolar PROMs
• Immune to Latch-UP
— Up to 200 mA
• ESD Protection Exceeds 2000V
GENERAL DESCRIPTION
The WS57C191C/291C is an extremely High Performance 16K UV Erasable Electrically Re-Programmable Read
Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar
PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. The WS57C191C/291C
is also configured in the standard Bipolar PROM pinout which provides an easy upgrade path for systems which are
currently using Bipolar PROMs.
The WS57C191C is packaged in a conventional 600 mil DIP package. The WS57C291C is packaged in a space
saving 300 mil DIP package configuration.
MODE SELECTION
PINS
CS1/V_PP CS2 CS3 V_CC OUTPUTS
MODE
Read
V_IL V_IH V_IH V_CC D_OUT
Output
Disable
V_{I H}
X
X V_CC High Z
Output
Disable
X
V_IL X V_CC High Z
Program
Program
Verify
V_PP
V_{I L}
X
X V_CC
V_IH V_IH V_CC
D_IN
D_OUT
Output
Disable
X
X V_IL V_CC High Z
PIN CONFIGURATION
TOP VIEW
CERDIP
A₇ 1
A₆ 2
A₅ 3
A₄ 4
A₃ 5
A₂ 6
A₁ 7
A₀ 8
O₀ 9
O₁ 10
O₂ 11
GND 12
24 V_CC
23 A₈
22 A₉
21 A10
20 CS1/V_PP
19 CS2
18 CS3
17 O₇
16 O₆
15 O₅
14 O₄
13 O₃
PRODUCT SELECTION GUIDE
PARAMETER
WS57C191C/291C-35
Address Access Time (Max)
35 ns
CS to Output Valid Time (Max)
20 ns
WS57C191C/291C-45
45 ns
20 ns
WS57C191C/291C-55
55 ns
20 ns
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