VNS3NV04DPTR-E Datasheet, PDF (1/21 Pages) STMicroelectronics – OMNIFET II fully autoprotected Power MOSFET

VNS3NV04DP-E
OMNIFET II
fully autoprotected Power MOSFET
Features
Max on-state resistance (per ch.)
Current limitation (typ)
Drain-source clamp voltage
R_ON
I_LIMH
V_CLAMP
120 mΩ
3.5 A
40 V
■ ECOPACK^®: lead free and RoHS compliant
■ Automotive Grade: compliance with AEC
guidelines
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
■ Direct access to the gate of the Power
MOSFET (analog driving)
■ Compatible with standard Power MOSFET
SO-8
Description
The VNS3NV04DP-E device is made up of two
monolithic chips (OMNIFET II) housed in a
standard SO-8 package. The OMNIFET II is
designed using STMicroelectronics™ VIPower™
M0-3 technology and is intended for replacement
of standard Power MOSFETs in up to 50 kHz DC
applications.
Built-in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring
voltage at the input pin
Table 1. Device summary
Package
SO-8
Tube
VNS3NV04DP-E
Order codes
Tape and reel
VNS3NV04DPTR-E
March 2011
Doc ID 018529 Rev 1
1/21
www.st.com
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