VNS3NV04D-E Datasheet, PDF (1/21 Pages) STMicroelectronics – OMNIFET II fully autoprotected Power MOSFET

VNS3NV04D-E
OMNIFET II
fully autoprotected Power MOSFET
Features
Max On-State resistance (per ch.)
Current limitation (typ)
Drain-Source clamp voltage
R_ON
I_LIMH
V_CLAMP
120mΩ
3.5A
40V
■ Linear current limitation
■ Thermal shut down
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ Esd protection
■ Direct access to the gate of the power mosfet
(analog driving)
■ Compatible with standard power mosfet
SO-8
Description
The VNS3NV04D-E is a device formed by two
monolithic OMNIFET II chips housed in a
standard SO-8 package. The OMNIFET II are
designed in STMicroelectronics VIPower M0-3
Technology: they are intended for replacement of
standard Power MOSFETs from DC up to 50KHz
applications. Built in thermal shutdown, linear
current limitation and overvoltage clamp protects
the chip in harsh environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Table 1. Device summary
Package
SO-8
Tube
VNS3NV04D-E
Order codes
Tape and Reel
VNS3NV04DTR-E
July 2007
Rev 2
1/21
www.st.com
21