VNS1NV04DPTR-E Datasheet, PDF (1/24 Pages) STMicroelectronics – OMNIFET II fully autoprotected Power MOSFET

VNS1NV04DP-E
OMNIFET II
fully autoprotected Power MOSFET
Features
Max On-state resistance⁽¹⁾
Current limitation (typ)⁽¹⁾
Drain-Source clamp voltage⁽¹⁾
1. Per each device.
R_DS(ON)
I_LIMH
V_CLAMP
250mΩ
1.7A
40V
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
■ Direct access to the gate of the power mosfet
(analog driving)
■ Compatible with standard power mosfet
■ In compliance with the 2002/95/EC european
directive
SO-8
Description
The VNS1NV04DP-E is a device formed by two
monolithic OMNIFET II chips housed in a
standard SO-8 package. The OMNIFET II are
designed in STMicroelectronics VIPower™ M0-3
technology: they are intended for replacement of
standard Power MOSFETs from DC up to 50KHz
applications. Built in thermal shutdown, linear
current limitation and overvoltage clamp protects
the chip in harsh environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Table 1. Device summary
Package
SO-8
April 2010
Tube
VNS1NV04DP-E
Order codes
Tape and reel
VNS1NV04DPTR-E
Doc ID 17344 Rev 2
1/24
www.st.com
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