VNS1NV04D-E Datasheet, PDF (1/14 Pages) STMicroelectronics – “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET

®
VNS1NV04D
“OMNIFET II”:
FULLY AUTOPROTECTED POWER MOSFET
TYPE
R_DS(on)
VNS1NV04D 250 mΩ (*)
I_lim
1.7 A (*)
V_clamp
40 V (*)
(*) Per each device
n LINEAR CURRENT LIMITATION
n THERMAL SHUT DOWN
n SHORT CIRCUIT PROTECTION
n INTEGRATED CLAMP
n LOW CURRENT DRAWN FROM INPUT PIN
n DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
n ESD PROTECTION
n DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
n COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNS1NV04D is a device formed by two
monolithic OMNIFET II chips housed in a
standard SO-8 package. The OMNIFET II are
designed in STMicroelectronics VIPower M0-3
BLOCK DIAGRAM
SO-8
Technology: they are intended for replacement of
standard Power MOSFETS from DC up to 50KHz
applications. Built in thermal shutdown, linear
current limitation and overvoltage clamp protects
the chip in harsh environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
INPUT1
DRAIN1
DRAIN2
GATE
CONTROL
OVERVOLTAGE
CLAMP
OVER
TEMPERATURE
LINEAR
CURRENT
LIMITER
OVERVOLTAGE
CLAMP
GATE
CONTROL
LINEAR
CURRENT
LIMITER
OVER
TEMPERATURE
SOURCE1
SOURCE2
INPUT2
February 2003
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