VNS14NV04TR-E Datasheet, PDF (1/31 Pages) STMicroelectronics – fully autoprotected Power MOSFET

VNB14NV04, VND14NV04
VND14NV04-1, VNS14NV04
"OMNIFET II"
fully autoprotected Power MOSFET
Features
TYPE
VNB14NV04
VND14NV04
VND14NV04-1
VNS14NV04
R_DS(on)
35 mΩ
I_lim
12 A
V_clamp
40 V
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
■ Direct access to the gate of the Power
MOSFET (analog driving)
■ Compatible with standard Power MOSFET
3
3
1
2
1
TO-252 (DPAK) TO-251 (IPAK)
SO-8
3
1
D²PAK
Description
The VNB14NV04, VND14NV04, VND14NV04-1 and
VNS14NV04 are monolithic devices made using
STMicroelectronics VIPower™ M0 technology,
intended for replacement of standard power
MOSFETS in DC to 50 KHz applications. Built-in
thermal shutdown, linear current limitation and
overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Table 1. Device summary
Package
Tube
D²PAK
VNB14NV04
TO-252 (DPAK)
VND14NV04
TO-251 (IPAK)
VND14NV04-1
SO-8
VNS14NV04
Tube (lead free)
VNB14NV04-E
VND14NV04-E
VND14NV04-1-E
-
Tape and reel
VNB14NV0413TR
VND14NV0413TR
-
-
Tape and reel (lead free)
VNB14NV04TR-E
VND14NV04TR-E
-
-
September 2013
Doc ID 7393 Rev 9
1/31
www.st.com
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