VNQ830 Datasheet, PDF (1/20 Pages) STMicroelectronics – QUAD CHANNEL HIGH SIDE DRIVER

®^M
VNQ830
QUAD CHANNEL HIGH SIDE DRIVER
TYPE
VNQ830
R_DS(on)
65 mΩ (*)
I_OUT
6 A (*)
V_CC
36 V
(*) Per each channel
s CMOS COMPATIBLE INPUTS
s OPEN DRAIN STATUS OUTPUTS
s ON STATE OPEN LOAD DETECTION
s OFF STATE OPEN LOAD DETECTION
s SHORTED LOAD PROTECTION
s UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
s LOSS OF GROUND PROTECTION
s VERY LOW STAND-BY CURRENT
s REVERSE BATTERY PROTECTION (**)
SO-28 (DOUBLE ISLAND)
ORDER CODES
PACKAGE
TUBE
T&R
SO-28
VNQ830
VNQ83013TR
DESCRIPTION
The VNQ830 is a quad HSD formed by
assembling two VND830 chips in the same SO-28
package. The VND830 is a monolithic device
made by using| STMicroelectronics VIPower M0-3
Technology. The VNQ830 is intended for driving
any type of multiple loads with one side connected
to ground.
Active V_CC pin voltage clamp protects the device
ABSOLUTE MAXIMUM RATING
against low energy spikes (see ISO7637 transient
compatibility table). Active current limitation
combined with thermal shutdown and automatic
restart protects the device against overload.
The device detects open load condition both in on
and off state. Output shorted to V_CC is detected in
the off state. Device automatically turns off in case
of ground pin disconnection.
Symbol
Parameter
V_CC
- V_CC
- I_GND
I_OUT
- I_OUT
I_IN
I_STAT
DC Supply Voltage
Reverse DC Supply Voltage
DC Reverse Ground Pin Current
DC Output Current
Reverse DC Output Current
DC Input Current
DC Status Current
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)
- INPUT
V_ESD
- STATUS
- OUTPUT
E_MAX
P_tot
T_j
T_stg
- V_CC
Maximum Switching Energy
(L=1.5mH; R_L=0Ω; V_bat=13.5V; T_jstart=150ºC; I_L=9A)
Power dissipation (per island) at T_lead=25°C
Junction Operating Temperature
Storage Temperature
(**) See application schematic at page 9
Value
Unit
41
V
- 0.3
V
- 200
mA
Internally Limited
A
-6
A
+/- 10
mA
+/- 10
mA
4000
V
4000
V
5000
V
5000
V
85
mJ
6.25
W
Internally Limited
°C
- 55 to 150
°C
January 2003
1/20