VNQ810 Datasheet, PDF (1/21 Pages) STMicroelectronics – QUAD CHANNEL HIGH SIDE DRIVER

®
VNQ810
QUAD CHANNEL HIGH SIDE DRIVER
TYPE
VNQ810
R_DS(on)
160 mΩ (*)
I_OUT
3.5 A (*)
V_CC
36 V
(*) Per each channel
s CMOS COMPATIBLE INPUTS
s OPEN DRAIN STATUS OUTPUTS
s ON STATE OPEN LOAD DETECTION
s OFF STATE OPEN LOAD DETECTION
s SHORTED LOAD PROTECTION
s UNDERVOLTAGE AND OVERVOLTAGE
SHUTDOWN
s PROTECTION AGAINST LOSS OF GROUND
s VERY LOW STAND-BY CURRENT
s REVERSE BATTERY PROTECTION (**)
SO-28 (DOUBLE ISLAND)
ORDER CODES
PACKAGE
TUBE
T&R
SO-28
VNQ810
VNQ81013TR
DESCRIPTION
The VNQ810 is a quad HSD formed by
assembling two VND810 chips in the same SO-28
package. The VND810 is a monolithic device
made by using STMicroelectronics VIPower M0-3
Technology, intended for driving any kind of load
with one side connected to ground.
Active V_CC pin voltage clamp protects the device
ABSOLUTE MAXIMUM RATING
against low energy spikes (see ISO7637 transient
compatibility table). Active current limitation
combined with thermal shutdown and automatic
restart protects the device against overload. The
device detects open load condition both in on and
off state . Output shorted to V_CC is detected in the
off state. Device automatically turns off in case of
ground pin disconnection.
Symbol
V_CC
- V_CC
- I_gnd
I_OUT
- I_OUT
I_IN
I_STAT
V_ESD
E_MAX
P_tot
T_j
T_stg
Parameter
DC Supply Voltage
Reverse DC Supply Voltage
DC Reverse Ground Pin Current
DC Output Current
Reverse DC Output Current
DC Input Current
DC Status Current
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)
- INPUT
- STATUS
- OUTPUT
- V_CC
Maximum Switching Energy
(L=1.38mH; R_L=0Ω; V_bat=13.5V; T_jstart=150ºC; I_L=5A)
Power dissipation (per island) at T_lead=25°C
Junction Operating Temperature
Storage Temperature
Value
Unit
41
V
- 0.3
V
- 200
mA
Internally Limited
A
-6
A
+/- 10
mA
+/- 10
mA
4000
V
4000
V
5000
V
5000
V
23
mJ
6.25
W
Internally Limited
°C
- 55 to 150
°C
(**) See application schematic at page 9
Rev. 1
July 2004
1/21