VNQ690SP Datasheet, PDF (1/19 Pages) STMicroelectronics – QUAD CHANNEL HIGH SIDE SOLID STATE RELAY

®
VNQ690SP
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
TYPE
VNQ690SP
R_DS(on)
90mΩ (*)
I_OUT
10 A
V_CC
36 V
(*) Per each channel
s OUTPUT CURRENT PER CHANNEL: 10A
s CMOS COMPATIBLE INPUTS
s OPEN LOAD DETECTION (OFF STATE)
s UNDERVOLTAGE & OVERVOLTAGE
n SHUT- DOWN
s OVERVOLTAGE CLAMP
s THERMAL SHUT-DOWN
s CURRENT LIMITATION
s VERY LOW STAND-BY POWER DISSIPATION
s PROTECTION AGAINST:
n LOSS OF GROUND & LOSS OF V_CC
s REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VNQ690SP is a monolithic device made by
using| STMicroelectronics VIPower M0-3
10
1
PowerSO-10™
ORDER CODES
PACKAGE
TUBE
T&R
PowerSO-10 VNQ690SP VNQ690SP13TR
Technology, intended for driving resistive or
inductive loads with one side connected to ground.
This device has four independent channels. Built-
in thermal shut down and output current limitation
protect the chip from over temperature and short
circuit.
ABSOLUTE MAXIMUM RATING
Symbol
V_CC
-V_CC
I_OUT
I_R
I_IN
I_STAT
I_GND
V_ESD
P_tot
E_MAX
T_j
T_stg
Parameter
Supply voltage (continuous)
Reverse supply voltage (continuous)
Output current (continuous), per each channel
Reverse output current (continuous), per each channel
Input current
Status current
Ground current at T_C<25°C (continuous)
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)
- INPUT
- STATUS
- OUTPUT
- V_CC
Power dissipation at T_C=25°C
Maximum Switching Energy
(L=0.38mH; R_L=0Ω; V_bat=13.5V; T_jstart=150ºC; I_L=14A)
Junction operating temperature
Storage temperature
(**) See application schematic at page 8
Value
Unit
41
V
-0.3
V
Internally limited
A
-15
A
+/- 10
mA
+/- 10
mA
-200
mA
4000
4000
5000
5000
78
53
-40 to 150
-65 to 150
V
V
V
V
W
mJ
°C
°C
Rev. 1
July 2004
1/19