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VNQ600AP Datasheet, PDF (1/18 Pages) STMicroelectronics – QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
®P
VNQ600AP
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
TYPE
RDS(on) (*)
Ilim
VNQ600AP
35mΩ
22A
VCC
36 V
(*) Per each channel
s DC SHORT CIRCUIT CURRENT: 22A
s CMOS COMPATIBLE INPUTS
s PROPORTIONAL LOAD CURRENT SENSE
s UNDERVOLTAGE & OVERVOLTAGE
nSHUT-DOWN
s OVERVOLTAGE CLAMP
s THERMAL SHUT-DOWN
s CURRENT LIMITATION
s VERY LOW STAND-BY POWER DISSIPATION
s PROTECTION AGAINST:
nLOSS OF GROUND & LOSS OF VCC
s REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VNQ600AP is a quad HSD formed by
SO-28 (DOUBLE ISLAND)
ORDER CODES
PACKAGE
TUBE
T&R
SO-28
VNQ600AP VNQ600AP13TR
assembling two VND600 chips in the same SO-28
package. The VND600 is a monolithic device
designed in| STMicroelectronics VIPower M0-3
Technology. The VNQ600A is intended for driving
any type of multiple loads with one side connected
to ground. This device has four independent
channels and four analog sense outputs which
deliver currents proportional to the outputs
currents. Active current limitation combined with
thermal shut-down and automatic restart protect
the device against overload. Device automatically
turns off in case of ground pin disconnection.
ABSOLUTE MAXIMUM RATING
Symbol
VCC
-VCC
IOUT
IR
IIN
Parameter
Supply voltage (continuous)
Reverse supply voltage (continuous)
Output current (continuous), for each channel
Reverse output current (continuous), for each channel
Input current
VCSENSE Current sense maximum voltage
IGND
VESD
EMAX
Ptot
Tj
Tstg
Ground current at Tpins < 25°C (continuous)
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)
- INPUT
- CURRENT SENSE
- OUTPUT
- VCC
Maximum Switching Energy
(L=0.11mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=40A)
Power dissipation (per island) at Tlead=25°C
Junction operating temperature
Storage temperature
Value
41
-0.3
15
-15
+/- 10
-3
+15
-200
4000
2000
5000
5000
126
6.25
Internally Limited
-55 to 150
Unit
V
V
A
A
mA
V
V
mA
V
V
V
V
mJ
W
°C
°C
(**) See application schematic at page 9.
April 2004
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