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VNQ600 Datasheet, PDF (1/18 Pages) STMicroelectronics – QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
®P
VNQ600
QUAD CHANNEL HIGH SIDE SOLID STATE RELAY
TYPE
VNQ600
RDS(on) (*)
Ilim
35mΩ
25A
VCC
36 V
(*) Per each channel
s DC SHORT CIRCUIT CURRENT: 25A
s CMOS COMPATIBLE INPUTS
s PROPORTIONAL LOAD CURRENT SENSE
s UNDERVOLTAGE & OVERVOLTAGE
nSHUT-DOWN
s OVERVOLTAGE CLAMP
s THERMAL SHUT-DOWN
s CURRENT LIMITATION
s VERY LOW STAND-BY POWER DISSIPATION
s PROTECTION AGAINST:
nLOSS OF GROUND & LOSS OF VCC
s REVERSE BATTERY PROTECTION (**)
DESCRIPTION
The VNQ600 is a quad HSD formed by
assembling two VND600 chips in the same SO-28
ABSOLUTE MAXIMUM RATING
SO-28 (DOUBLE ISLAND)
ORDER CODES
PACKAGE
TUBE
T&R
SO-28
VNQ600
VNQ60013TR
package. The VND600 is a monolithic device
designed in| STMicroelectronics VIPower M0-3
Technology. The VNQ600 is intended for driving
any type of multiple loads with one side connected
to ground. This device has four independent
channels and four analog sense outputs which
deliver currents proportional to the outputs
currents. Active current limitation combined with
thermal shut-down and automatic restart protect
the device against overload. Device automatically
turns off in case of ground pin disconnection.
Symbol
Parameter
Value
Unit
VCC
-VCC
IOUT
IR
IIN
Supply voltage (continuous)
Reverse supply voltage (continuous)
Output current (continuous), for each channel
Reverse output current (continuous), for each channel
Input current
VCSENSE Current sense maximum voltage
41
V
-0.3
V
15
A
-15
A
+/- 10
mA
-3
V
+15
V
IGND Ground current at Tpins < 25°C (continuous)
-200
mA
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)
- INPUT
4000
V
VESD
- CURRENT SENSE
- OUTPUT
2000
V
5000
V
EMAX
Ptot
Tj
Tstg
- VCC
Maximum Switching Energy
(L=0.11mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IL=40A)
Power dissipation (per island) at Tlead=25°C
Junction operating temperature
Storage temperature
5000
V
126
mJ
6.25
W
Internally Limited
°C
-55 to 150
°C
(**) See application schematic at page 9.
June 2003
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