VNN7NV04_10 Datasheet, PDF (1/37 Pages) STMicroelectronics – OMNIFET II fully autoprotected Power MOSFET

VNN7NV04, VNS7NV04
VND7NV04, VND7NV04-1
OMNIFET II
fully autoprotected Power MOSFET
Features
Type
R_DS(on)
I_lim
V_clamp
VNN7NV04
VNS7NV04
60 mΩ
6A
VND7NV04
VND7NV04-1
40 V
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
■ Direct access to the gate of the Power
MOSFET (analog driving)
■ Compatible with standard Power MOSFET in
compliance with the 2002/95/EC European
Directive
2
3
2
1
SOT-223
SO-8
3
1
TO252 (DPAK)
3
2
1
TO251 (IPAK)
Description
The VNN7NV04, VNS7NV04, VND7NV04
VND7NV04-1, are monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,
intended for replacement of standard Power
MOSFETs from DC up to 50 kHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Table 1. Device summary
Package
SOT-223
SO-8
TO-252
TO-251
Tube
VNN7NV04
VNS7NV04
VND7NV04
VND7NV04-1
Order codes
Tube (lead-free)
-
-
VND7NV04-E
VND7NV04-1-E
Tape and reel
VNN7NV0413TR
VNS7NV0413TR
VND7NV0413TR
-
Tape and reel (lead-free)
-
-
VND7NV04TR-E
-
September 2010
Doc ID 7383 Rev 3
1/37
www.st.com
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