VNN7NV04PTR-E Datasheet, PDF (1/29 Pages) STMicroelectronics – OMNIFET II fully autoprotected Power MOSFET

VNN7NV04P-E, VNS7NV04P-E
OMNIFET II
fully autoprotected Power MOSFET
Features
Type
R_DS(on)
I_lim
V_clamp
VNN7NV04P-E _{60 mΩ}
6A
VNS7NV04P-E
40 V
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
■ Direct access to the gate of the Power
MOSFET (analog driving)
■ Compatible with standard Power MOSFET in
compliance with the 2002/95/EC European
Directive
2
3
2
1
SOT-223
SO-8
Description
The VNN7NV04P-E, VNS7NV04P-E, are
monolithic devices designed in
STMicroelectronics VIPower™ M0-3 Technology,
intended for replacement of standard Power
MOSFETs from DC up to 50 kHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
July 2011
Table 1. Device summary
Package
Order codes
Tube
Tape and reel
SOT-223
-
VNN7NV04PTR-E
SO-8
VNS7NV04P-E VNS7NV04PTR-E
Doc ID 15632 Rev 3
1/29
www.st.com
1