VNN3NV04_09 Datasheet, PDF (1/26 Pages) STMicroelectronics – OMNIFET II fully autoprotected Power MOSFET

VNN3NV04, VNS3NV04
VND3NV04, VND3NV04-1
OMNIFET II
fully autoprotected Power MOSFET
Features
Type
VNN3NV04
VNS3NV04
VND3NV04
VND3NV04-1
R_DS(on)
120 mΩ
I_lim
3.5 A
V_clamp
40 V
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
■ Direct access to the gate of the Power
MOSFET (analog driving)
■ Compatible with standard Power MOSFET in
compliance with the 2002/95/EC European
Directive
2
3
2
1
SOT-223
SO-8
3
1
TO252 (DPAK)
3
2
1
TO251 (IPAK)
Description
The VNN3NV04, VNS3NV04, VND3NV04
VND3NV04-1, are monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,
intended for replacement of standard Power
MOSFETs from DC up to 50 kHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Table 1. Device summary
Package
SOT-223
SO-8
TO-252
TO-251
Tube
VNN3NV04
VNS3NV04
VND3NV04
VND3NV04-1
Order codes
Tube (lead-free)
-
-
VND3NV04-E
VND3NV04-1-E
Tape and reel
VNN3NV0413TR
VNS3NV0413TR
VND3NV0413TR
-
Tape and reel (lead-free)
-
-
VND3NV04TR-E
-
April 2009
Doc ID 7382 Rev 2
1/26
www.st.com
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