VNN3NV04PTR-E Datasheet, PDF (1/22 Pages) STMicroelectronics – OMNIFET II fully autoprotected Power MOSFET

Features
VNN3NV04P-E
VNS3NV04P-E
OMNIFET II
fully autoprotected Power MOSFET
Datasheet − production data
Type
VNN3NV04P-E
VNS3NV04P-E
R_DS(on)
120 mΩ
I_lim
3.5 A
V_clamp
40 V
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
■ Direct access to the gate of the Power
MOSFET (analog driving)
■ Compatible with standard Power MOSFET in
compliance with the 2002/95/EC European
directive
2
3
2
1
SOT-223
SO-8
Description
The VNN3NV04P-E, VNS3NV04P-E, are
monolithic devices designed in
STMicroelectronics^® VIPower^® M0-3 Technology,
intended for replacement of standard Power
MOSFETs from DC up to 50 kHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Table 1. Device summary
Package
Order codes
Tube
Tape and reel
SOT-223
—
VNN3NV04PTR-E
SO-8 VNS3NV04P-E VNS3NV04PTR-E
May 2012
This is information on a product in full production.
Doc ID 15626 Rev. 4
1/22
www.st.com
1