VNN1NV04TR-E Datasheet, PDF (1/33 Pages) STMicroelectronics – OMNIFET II fully autoprotected Power MOSFET

VND1NV04
VNN1NV04 - VNS1NV04
OMNIFET II
fully autoprotected Power MOSFET
Features
Parameter
Symbol Value
Max on-state resistance (per ch.)
Current limitation (typ)
Drain-source clamp voltage
R_ON
I_LIMH
V_CLAMP
250 mΩ
1.7 A
40 V
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
■ Direct access to the gate of the Power
MOSFET (analog driving)
■ Compatible with standard Power MOSFET
3
1
TO-252 (DPAK)
2
3
2
1
SOT-223
SO-8
Description
The VND1NV04, VNN1NV04, VNS1NV04 are
monolithic devices designed in
STMicroelectronics^® VIPower^® M0-3 Technology,
intended for replacement of standard Power
MOSFETs from DC up to 50 KHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Table 1. Device summary
Package
TO-252 (DPAK)
SOT-223
SO-8
Tube
VND1NV04
VNN1NV04
VNS1NV04
Order codes
Tube (lead free) Tape and reel Tape and reel (lead free)
VND1NV04-E
-
-
VND1NV0413TR
VNN1NV0413TR
VNS1NV0413TR
VND1NV04TR-E
-
-
December 2011
Doc ID 7381 Rev 3
1/33
www.st.com
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