VNN1NV04PTR-E Datasheet, PDF (1/28 Pages) STMicroelectronics – OMNIFET II fully autoprotected Power MOSFET

VNN1NV04P-E, VNS1NV04P-E
OMNIFET II
fully autoprotected Power MOSFET
Features
Parameter
Symbol Value
Max on-state resistance (per ch.)
Current limitation (typ)
Drain-source clamp voltage
R_ON
I_LIMH
V_CLAMP
250 mΩ
1.7 A
40 V
■ Linear current limitation
■ Thermal shutdown
■ Short circuit protection
■ Integrated clamp
■ Low current drawn from input pin
■ Diagnostic feedback through input pin
■ ESD protection
■ Direct access to the gate of the Power
MOSFET (analog driving)
■ Compatible with standard Power MOSFET
2
3
2
1
SOT-223
SO-8
Description
The VNN1NV04P-E, VNS1NV04P-E are
monolithic devices designed in
STMicroelectronics VIPower M0-3 Technology,
intended for replacement of standard Power
MOSFETs from DC up to 50 kHz applications.
Built in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
October 2009
Table 1. Device summary
Package
Order codes
Tube
Tape and reel
SOT-223 VNN1NV04P-E VNN1NV04PTR-E
SO-8 VNS1NV04P-E VNS1NV04PTR-E
Doc ID 15586 Rev 2
1/28
www.st.com
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