VNL5160N3TR-E Datasheet, PDF (1/26 Pages) STMicroelectronics – OMNIFET III fully protected low-side driver

VNL5160N3-E
VNL5160S5-E
OMNIFET III
fully protected low-side driver
Features
Type
VNL5160N3-E
VNL5160S5-E
V_clamp
41 V
R_DS(on)
I_D
160 mΩ 3.5 A
■ Drain current:3.5A
■ ESD protection
■ Overvoltage clamp
■ Thermal shutdown
■ Current and power limitation
■ Very low standby current
■ Very low electromagnetic susceptibility
■ In compliance with the 2002/95/EC European
directive
■ Open drain status output^(a)
■ Specially intended for R10W or 2x R5W
automotive signal lamps
2
3
2
1
SOT-223
SO-8
Description
The VNL5160N3-E and VNL5160S5-E are
monolithic devices, made using
STMicroelectronics^® VIPower^® Technology,
intended for driving resistive or inductive loads
with one side connected to the battery. Built-in
thermal shutdown protects the chip from
overtemperature and short circuit. Output current
limitation protects the devices in an overload
condition. In the case of a long duration overload,
the device limits the dissipated power to a safe
level up to thermal shutdown intervention.
Thermal shutdown, with automatic restart, allows
the device to recover normal operation as soon as
a fault condition disappears. Fast
demagnetization of inductive loads is achieved at
turn-off.
a. Valid for VNL5160S5-E only.
Table 1. Device summary
Package
SOT-223
SO-8
Tube
VNL5160N3-E
VNL5160S5-E
Order codes
Tape and reel
VNL5160N3TR-E
VNL5160S5TR-E
February 2012
Doc ID 16364 Rev 2
1/26
www.st.com
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