VND670SP_08 Datasheet, PDF (1/20 Pages) STMicroelectronics – Dual high-side switch with dual Power MOSFET gate driver(bridge configuration)

VND670SP
Dual high-side switch with dual Power MOSFET
gate driver (bridge configuration)
Features
Type
VND670SP
R_DS(on)
30mΩ⁽¹⁾
1. Per each channel.
I_OUT
15A⁽¹⁾
V_CC
40V
■ 5V logic level compatible inputs
■ Gate drive for two external power MOSFET
■ Undervoltage and overvoltage shutdown
■ Overvoltage clamp
■ Thermal shutdown
■ Cross-conduction protection
■ Current limitation
■ Very low standby power consumption
■ PWM operation up to 10 KHz
■ Protection against loss of ground and loss of
V_CC
■ Reverse battery protection
10
1
PowerSO-10
Description
The VND670SP is a monolithic device made
using STMicroelectronics VIPower technology
M0-3, intended for driving motors in full bridge
configuration. The device integrates two 30 mW
Power MOSFET in high-side configuration, and
provides gate drive for two external Power
MOSFET used as low side switches. IN_A and IN_B
allow to select clockwise or counter clockwise
drive or brake; DIAG_A/EN_A, DIAG_B/EN_B allow to
disable one half bridge and feedback diagnostic.
Built-in thermal shutdown, combined with a
current limiter, protects the chip in
overtemperature and short circuit conditions.
Short to battery protects the external connected
low-side Power MOSFET.
Table 1. Device summary
Package
PowerSO-10
Tube
VND670SP
Order codes
Tape and reel
VND670SP13TR
December 2008
Rev 2
1/20
www.st.com
20