VND5N07-E Datasheet, PDF (1/24 Pages) STMicroelectronics – fully autoprotected Power MOSFET

VND5N07
OMNIFET II
fully autoprotected Power MOSFET
Features
Max. on-state resistance (per ch.)
Current limitation (typ)
) _{Drain-Source clamp voltage}
R_{DS (on)}
I_LIMH
V_CLAMP
0.2Ω
5A
70V
uct(s _{■ Linear current limitation}
rod ^{■ Thermal shutdown}
P _{■ Short circuit protection}
te ^{■ Integrated clamp}
le _{■ Low current drawn from input pin}
so ■ Diagnostic feedback through input pin
b _{■ Esd protection}
- ^{O ■ Direct access to the gate of the power mosfet}
) (analog driving)
Obsolete ^{Product(s ■ Compatible with standard Power MOSFET}
3
1
DPAK
TO-252
3
2
1
IPAK
TO-251
ISOWATT200
SOT-82FM
Description
The VND5N07 is a monolithic device designed in
STMicroelectronics VIPower M0 technology,
intended for replacement of standard Power
MOSFETs from DC to 50KHz applications. Built in
thermal shutdown, linear current limitation and
overvoltage clamp protect the chip in harsh
environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Table 1. Device summary
Package
Tube
Order codes
Tape and reel
DPAK
VND5N07
VND5N0713TR
IPAK
VND5N07-1
ISOWATT220
VNP5N07FI
SOT-82FM
VNK5N07FM
September 2013
Rev 4
1/24
www.st.com
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