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| VNB35NV04-E Datasheet, PDF (1/27 Pages) STMicroelectronics – OMNIFET II: fully autoprotected Power MOSFET | |||
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VNB35NV04-E, VNP35NV04-E,
VNV35NV04-E
OMNIFET II: fully autoprotected Power MOSFET
3
1
D2PAK
10
1
PowerSO-10
3
2
1
TO-220
Features
Type
RDS(on)
VNB35NV04-E
VNP35NV04-E
VNV35NV04-E
10 mΩ(1)
1. For PowerSO-10 only
Ilim
30 A
Vclamp
40 V
⢠Linear current limitation
⢠Thermal shutdown
⢠Short circuit protection
⢠Integrated clamp
⢠Low current drawn from input pin
Datasheet - production data
⢠Diagnostic feedback through input pin
⢠ESD protection
⢠Direct access to the gate of the Power
MOSFET (analog driving)
⢠Compatible with standard Power MOSFET
Description
The VNB35NV04-E, VNP35NV04-E and
VNV35NV04-E are monolithic devices designed
in STMicroelectronics® VIPower® M0-3
Technology, intended for replacement of standard
Power MOSFETs from DC up to 25 kHz
applications.
Built-in thermal shutdown, linear current limitation
and overvoltage clamp protect the chip in harsh
environments. Fault feedback can be detected by
monitoring the voltage at the input pin.
Package
D2PAK
TO-220
PowerSO-10
Table 1. Device summary
Order codes
Tube
VNB35NV04-E
VNP35NV04-E
VNV35NV04-E
Tape and reel
VNB35NV04TR-E
â
VNV35NV04TR-E
February 2015
This is information on a product in full production.
DocID023550 Rev 5
1/27
www.st.com
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