TYNX10 Datasheet, PDF (1/6 Pages) STMicroelectronics – 10A SCR

®
STANDARD
Table 1: Main Features
Symbol
Value
I_T(RMS)
10
V_DRM/V_RRM
400, 600 and 800
I_GT
15
Unit
A
V
mA
TYNx10 Series
10A SCR
A
G
K
A
DESCRIPTION
The TYNx10 Silicon Controlled Rectifiers is a high
performance glass passivated technology.
This general purpose Silicon Controlled Rectifiers
is designed for power supply up to 400Hz on resis-
tive or inductive load.
K
A
G
TO-220AB
Table 2: Order Codes
Part Numbers
TYN410RG
TYN610RG
TYN810RG
Marking
TYN410
TYN610
TYN810
Table 3: Absolute Ratings (limiting values)
Symbol
Parameter
I_T(RMS) RMS on-state current (180° conduction angle)
T_c = 100°C
IT_(AV) Average on-state current (180° conduction angle)
T_c = 100°C
I_TSM
Non repetitive surge peak on-state
current
t_p = 8.3 ms
t_p = 10 ms
T_j = 25°C
I^²t I^²t Value for fusing
t_p = 10 ms T_j = 25°C
dI/dt
Critical rate of rise of on-state current
I_G = 100 mA , dI_G/dt = 0.1 A/µs
T_j = 125°C
I_GM Peak gate current
t_p = 20 µs T_j = 125°C
P_G(AV) Average gate power dissipation
T_j = 125°C
P_GM Maximum gate power
t_p = 20 µs T_j = 125°C
V_DRM
V_RRM
Repetitive peak off-state voltage
TYN410
TYN610
TYN810
T_j = 125°C
T_{stg Storage junction temperature range}
T_j Operating junction temperature range
T_L Maximum lead temperature for soldering during 10s at 2mm from case
Value
10
6.4
105
100
50
50
4
1
10
400
600
800
- 40 to + 150
- 40 to + 125
260
Unit
A
A
A
A²S
A/µs
A
W
W
V
°C
°C
February 2006
REV. 2
1/6