TXDV412 Datasheet, PDF (1/5 Pages) STMicroelectronics – ALTERNISTORS

FEATURES
. VERY HIGH COMMUTATION : > 42.5 A/ms
(400Hz)
. INSULATING VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : E81734)
. dV/dt : 500 V/µs min
TXDV 412 ---> 812
ALTERNISTORS
DESCRIPTION
The TXDV 412 ---> 812 use a high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge cur-
rent capability, this family is well adapted to power
control on inductive load (motor, transformer...)
ABSOLUTE RATINGS (limiting values)
A1
A2 _G
TO220AB
(Plastic)
Symbol
IT(RMS)
RMS on-state current
(360° conduction angle)
Parameter
Tc = 90 °C
Value
12
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Non repetitive surge peak on-state current
( Tj initial = 25°C )
tp = 2.5 ms
tp = 8.3 ms
I2t value
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/µs
Repetitive
F = 50 Hz
Non
Repetitive
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
170
125
120
72
20
100
- 40 to + 150
- 40 to + 125
260
Symbol _Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125 °C
March 1995
TXDV
412
612
812
400
600
800
Unit
A
A
A2s
A/µs
°C
°C
°C
Unit
V
1/5