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TRD236D Datasheet, PDF (1/12 Pages) STMicroelectronics – High voltage capability
TRD236D
High voltage fast-switching NPN power transistor
Preliminary data
Features
■ High voltage capability
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
) ■ Very high switching speed
t(s ■ Integrated antiparallel collector-emitter diode
duc Applications
ro ■ Electronic ballast for fluorescent lighting
P ■ Electronic transformer for halogen lamps
olete Description
bs This device is an NPN power transistor
O manufactured using high voltage multi epitaxial
- planar technology for high switching speeds. It
) uses a cellular emitter structure with planar edge
t(s termination to enhance switching speeds while
Obsolete Produc maintaining a satisfactory RBSOA.
3
1
TO-252 (DPAK)
Figure 1. Internal schematic diagram
Table 1. Device summary
Part number
TRD236DT4
Marking
TRD236D
Package
TO-252
Packaging
Tape and reel
June 2011
Doc ID 018985 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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