TODV640 Datasheet, PDF (1/5 Pages) STMicroelectronics – ALTERNISTORS

TODV 640 ---> 1240
ALTERNISTORS
FEATURES
. HIGH COMMUTATION : > 142 A/ms (400Hz)
. INSULATING VOLTAGE = 2500V_(RMS)
(UL RECOGNIZED : EB1734)
. HIGH VOLTAGE CAPABILITY : V_DRM = 1200 V
A2
G
A1
DESCRIPTION
The TODV 640 ---> 1240 use a high performance
passivated glass alternistor technology. Featuring
very high commutation levels and high surge cur-
rent capability, this family is well adapted to power
control on inductive load (motor, transformer...)
ABSOLUTE RATINGS (limiting values)
RD91
(Plastic)
Symbol
IT(RMS)
RMS on-state current
(360° conduction angle)
Parameter
Value
Unit
Tc = 75 °C
40
A
ITSM
I2t
dI/dt
Tstg
Tj
Tl
Non repetitive surge peak on-state current
( Tj initial = 25°C )
tp = 2.5 ms
tp = 8.3 ms
I2t value
tp = 10 ms
tp = 10 ms
Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/µs
Repetitive
F = 50 Hz
Non
Repetitive
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
590
370
350
610
20
100
- 40 to + 150
- 40 to + 125
260
A
A2s
A/µs
°C
°C
°C
Symbol
Parameter
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125 °C
March 1995
TODV
Unit
640
840
1040
1240
600
800
1000
1200
V
1/5