TN0193 Datasheet, PDF (1/6 Pages) STMicroelectronics – LRIS64K bumped die description

TN0193
Technical note
LRIS64K bumped die description
Product information
■ Product name:
LRIS64K
Wafer and die features
Wafer diameter:
8 inches
Wafer thickness:
180 µm
Die identification:
M24RF64A1
Die finishing (front side):
Die finishing (back side):
SiO₂
bare Si
Die stepping (including X & Y scribes): X= 1500 µm
Scribing street:
X = 80 µm
Bond pad size inside die:
X = 90 µm
Bond pad opening inside die:
X = 80 µm
Bond pad Metallization:
AlSiCu
Y= 2000 µm
Y = 80 µm
Y = 90 µm
Y = 80µm
July 2010
Doc ID 17034 Rev 3
1/6
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