TMMBAT41 Datasheet, PDF (1/4 Pages) STMicroelectronics – SMALL SIGNAL SCHOTTKY DIODE

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TMMBAT 41
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against ex-
cessive voltage such as electrostatic discharges.
ABSOLUTE RATINGS (limiting values)
Symbol
VRRM
I_F
I_FRM
I_FSM
Ptot
T_stg
T_j
T_L
Parameter
Repetitive Peak Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward Current
Surge non Repetitive Forward Current
Power Dissipation
Storage and Junction Temperature Range
Ti = 25 °C
t_p ≤ 1s
δ ≤ 0.5
t_p = 10ms
T_i = 95 °C
Maximum Temperature for Soldering during 15s
THERMAL RESISTANCE
Symbol
R_th(j-l)
Junction-leads
Test Conditions
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
V_BR
V_F*
I_R*
T_j = 25°C
Tj = 25°C
Tj = 25°C
T_j = 25°C
T_j = 100°C
Test Conditions
I_R = 100µA
IF = 1mA
IF = 200mA
V_R = 50V
DYNAMIC CHARACTERISTICS
Symbol
C
Tj = 25°C
Test Conditions
VR = 1V
f = 1MHz
* Pulse test: tp ≤ 300µs δ < 2%.
August 1999 Ed: 1A
MINIMELF
(Glass)
Value
100
100
350
750
100
- 65 to + 150
- 65 to + 125
260
Value
300
Unit
V
mA
mA
mA
mW
°C
°C
°C
Unit
°C/W
Min. Typ. Max. Unit
100
V
0.4 0.45
V
1
0.1
µA
20
Min. Typ. Max. Unit
2
pF
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