TMM6263 Datasheet, PDF (1/3 Pages) STMicroelectronics – SMALL SIGNAL SCHOTTKY DIODE

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TMM 6263
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
Metal to silicon junction diode featuring high break-
down, low turn-on voltage and ultrafast switching.
Primarly intended for high level UHF/VHF detection
and pulse application with broad dynamic range.
ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol
V_RRM
I_F
I_FSM
T_stg
Tj
TL
Parameter
Repetitive Peak Reverse Voltage
Forward Continuous Current
Surge non Repetitive Forward Current
Storage and Junction Temperature Range
Ti = 25 °C
tp ≤ 1s
Maximum Temperature for Soldering during 15s
MINIMELF
(Glass)
Value
Unit
60
V
15
mA
50
mA
- 65 to 200
°C
-65 to 200
260
°C
THERMAL RESISTANCE
Symbol
Rth(j-l)
Junction-leads
Test Conditions
Value
400
Unit
°C/W
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
V_BR
V_F*
IR*
Tamb = 25°C
T_amb = 25°C
T_amb = 25°C
T_amb = 25°C
Test Conditions
IR = 10µA
I_F = 1mA
I_F = 15mA
V_R = 50V
Min. Typ. Max. Unit
60
V
0.41
V
1
0.2
µA
DYNAMIC CHARACTERISTICS
Symbol
C
τ
T_amb = 25°C
T_amb = 25°C
Test Conditions
V_R = 0V
I_F = 5mA
f = 1MHz
Krakauer Method
Min. Typ. Max. Unit
2.2
pF
100
ps
* Pulse test: tp ≤ 300µs δ < 2%.
Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
August 1999 Ed: 1A
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