TMBAT49 Datasheet, PDF (1/4 Pages) STMicroelectronics – SMALL SIGNAL SCHOTTKY DIODE

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TMBAT 49
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against ex-
cessive voltage such as electrostatic discharges.
ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol
VRRM
I_F
IFRM
I_FSM
T_stg
Tj
T_L
Parameter
Repetitive Peak Reverse Voltage
Forward Continuous Current
Repetitive Peak Forward Current
Surge non Repetitive Forward Current
Storage and Junction Temperature Range
T_i = 70 °C
tp = 1s
δ ≤ 0.5
t_p = 10ms
Maximum Temperature for Soldering during 15s
THERMAL RESISTANCE
Symbol
R_th(j-l)
Junction-leads
Test Conditions
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
I_R *
V_F *
Tj = 25°C
T_j = 25°C
Tj = 25°C
T_j = 25°C
Test Conditions
VR = 80V
I_F = 10mA
IF = 100mA
I_F = 1A
DYNAMIC CHARACTERISTICS
Symbol
C
T_j = 25°C
Test Conditions
f = 1MHz
V_R = 0V
V_R = 5V
* Pulse test: tp ≤ 300µs δ < 2%.
August 1999 Ed 1A
MELF
(Glass)
Value
Unit
80
V
500
mA
3
A
10
A
- 65 to + 150
°C
- 65 to + 125
°C
260
°C
Value
110
Unit
°C/W
Min. Typ. Max. Unit
200
µA
0.32
V
0.42
1
Min. Typ. Max. Unit
120
pF
35
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