TD350E Datasheet, PDF (1/17 Pages) STMicroelectronics – Advanced IGBT/MOSFET driver

TD350E
Advanced IGBT/MOSFET driver
Features
■ 1.5 A source/2.3 A sink (typ) gate drive
■ Active Miller clamp feature
■ Two-level turn-off with adjustable level and
delay
■ Desaturation detection
■ Fault status output
■ Negative gate drive capability
■ Input compatible with pulse transformer or
optocoupler
■ Separate sink and source outputs for easy gate
driving
■ UVLO protection
■ 2 kV ESD protection (HBM)
Applications
■ 1200 V, 3-phase inverters
■ Motor control
■ UPS systems
Table 1. Device summary
Order codes
Temperature range
TD350E
TD350ETR
-40, +125 °C
Description
This device is an advanced gate driver for IGBTs
and power MOSFETs. Control and protection
functions are included and allow the design of
high reliability systems.
The innovative active Miller clamp function
eliminates the need for negative gate drive in
most applications and allows the use of a simple
bootstrap supply for the high side driver.
The device includes a two-level turn-off feature
with adjustable level and delay. This function
protects against excessive overvoltage at turn-off
in case of overcurrent or short-circuit conditions.
The same delay set in the two-level turn-off
feature is applied at turn-on to prevent pulse width
distortion.
The device also includes IGBT desaturation
protection and a FAULT status output, and is
compatible with both pulse transformer and
optocoupler signals.
Package
SO-14
Packaging
Tube
Tape and reel
September 2011
Doc ID 018539 Rev 2
1/17
www.st.com
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