STY80NM60N Datasheet, PDF (1/9 Pages) STMicroelectronics – N-channel 600 V - 0.035 Ω - 80 A - Max247 second generation MDmesh™ Power MOSFET

Features
STY80NM60N
N-channel 600 V - 0.035 Ω - 80 A - Max247
second generation MDmesh™ Power MOSFET
Preliminary Data
Type
V_DSS
R_DS(on)
I_D
Pw
STY80NM60N 600 V < 0.040 Ω 80 A 560 W
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
Max247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
STY80NM60N
Marking
80NM60N
Package
Max247
Packaging
Tube
December 2007
Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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