STY60NM50 Datasheet, PDF (1/8 Pages) STMicroelectronics – N-CHANNEL 500V - 0.045ohm - 60A Max247 Zener-Protected MDmesh™Power MOSFET

STY60NM50
N-CHANNEL 500V - 0.045Ω - 60A Max247
Zener-Protected MDmesh™Power MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STY60NM50
500V
< 0.05Ω
60 A
n TYPICAL R_DS(on) = 0.045Ω
n HIGH dv/dt AND AVALANCHE CAPABILITIES
n IMPROVED ESD CAPABILITY
n LOW INPUT CAPACITANCE AND GATE
CHARGE
n LOW GATE INPUT RESISTANCE
n TIGHT PROCESS CONTROL
n INDUSTRY’S LOWEST ON-RESISTANCE
DESCRIPTION
The MDmesh™ is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH™ horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
3
2
1
Max247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM (l) Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
V_ESD(G-S) Gate source ESD(HBM-C=100pF, R=15KΩ)
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
August 2002
Value
Unit
500
V
500
V
±30
V
60
A
37.8
A
240
A
560
W
6
KV
4.5
W/°C
15
V/ns
–65 to 150
°C
150
°C
(1)I_SD ≤60A, di/dt ≤400A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
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