STY60NA20 Datasheet, PDF (1/5 Pages) STMicroelectronics – N - CHANNEL 200V - 0.030ohm - 60 A - Max247 FAST POWER MOS TRANSISTOR

®
STY60NA20
N - CHANNEL 200V - 0.030Ω - 60 A - Max247
FAST POWER MOS TRANSISTOR
TYPE
STY60NA20
V _DSS
200 V
R_DS(on)
< 0.032 Ω
I_D
60 A
s TYPICAL RDS(on) = 0.030 Ω
s EFFICIENT AND RELIABLE MOUNTING
THROUGH CLIP
s ± 30V GATE TO SOURCE VOLTAGE RATING
s REPETITIVE AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s 100% AVALANCHE TESTED
s GATE CHARGE MINIMIZED
s REDUCED THRESHOLD VOLTAGE SPREAD
DESCRIPTION
T he Max247^TM package is a new high volume
power package exibiting the same footprint as the
industr y standard T O-247, but designed to
accomodate much larger silicon chips, normally
supplied in bigger packages such as T O-264. The
increased die capacity makes the device ideal to
reduce component count in multiple paralleled
designs and save board space with respect to
larger packages.
PRELIMINARY DATA
3
2
1
Max247^TM
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES (UPS)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS Drain-source Volt age (V_GS = 0)
VDGR Drain- gat e Volt age (R_GS = 20 kΩ)
VGS Gate-source Voltage
I_D
Drain Current (continuous) at T_c = 25 ^oC
I_D
Drain Current (continuous) at T_c = 100 ^oC
IDM(•)
P_tot
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating Factor
Tstg St orage Temperature
Tj
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
August 1998
Value
200
200
± 30
60
40
240
300
2.4
-65 to 150
150
Uni t
V
V
V
A
A
A
W
W/^oC
o_C
o_C
1/4