STY34NB50F Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 500V - 0.11ohm - 34 A - Max247 PowerMESH MOSFET

®
STY34NB50F
N - CHANNEL 500V - 0.11Ω - 34 A - Max247
PowerMESH™ MOSFET
TYPE
V _DSS
R_DS(on)
I_D
STY34NB50F
500 V < 0.14 Ω 34 A
s TYPICAL RDS(on) = 0.11 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
3
2
1
Max247™
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
V_DS Drain-source Voltage (V_GS = 0)
V _DGR
VGS
I_D
I_D
I_DM(•)
P_tot
Drain- gat e Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
Total Dissipation at T_c = 25 ^oC
Derating F actor
dv/dt(1) Peak Diode Recovery voltage slope
T_{s tg} Storage Temperature
T_j
Max. O perating Junction Temperature
(•) Pulse width limited by safe operating area
Va l u e
Un it
500
V
500
V
± 30
V
34
A
2 1 .4
A
136
A
450
3.61
W
W /^o C
4 .5
-65 to 150
150
( 1) ISD ≤34 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
December 1999
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