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STY34NB50 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 500V - 0.11ohm - 34 A - Max247 PowerMESH MOSFET | |||
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STY34NB50
N - CHANNEL 500V - 0.11⦠- 34 A - Max247
PowerMESH⢠MOSFET
TYPE
VDSS
RDS(on)
ID
ST Y34NB50
500 V < 0.13 ⦠34 A
s TYPICAL RDS(on) = 0.11 â¦
s EXTREMELY HIGH dv/dt CAPABILITY
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
DESCRIPTION
Using the latest high voltage MESH OVERLAYâ¢
process, SGS-Thomson has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Companyâs proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
3
2
1
Max247â¢
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Volt age (VGS = 0)
VD GR
VGS
ID
ID
Drain- gate Voltage (RGS = 20 kâ¦)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
IDM(â¢)
Ptot
Drain Current (pulsed)
Total Dissipation at Tc = 25 oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg St orage Temperature
Tj
Max. Operating Junction Temperature
(â¢) Pulse width limited by safe operating area
June 1998
Value
Uni t
500
V
500
V
± 30
V
34
A
21.4
A
136
A
450
3.61
W
W/oC
4.5
-65 to 150
150
(1) ISD â¤34 A, di/dt ⤠200 A/µs, VDD ⤠V(BR)DSS, Tj ⤠TJMAX
V/ ns
oC
oC
1/8
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